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AlGaN/GaN high electron mobility transistors (HEMTs) by plasma-assisted molecular beam epitaxy on free-standing GaN substrates grown by hydride vapour phase epitaxy (HVPE) have been fabricated. Hall measurements yielded typical electron mobilities of 1750 cm2/Vs with sheet densities of 1.1×1013 cm-2. Off-state breakdown voltages as high as 200 V were measured on unpassivated devices. Output power density at 4 GHz was measured to be 5.1 W/mm at a power-added efficiency of 46% and an associated gain of 13.4 dB. This constitutes significant improvement of RF performance by MBE-grown AlGaN/GaN HEMTs on free-standing HVPE GaN.
Date of Publication: 25 May 2006