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1.43 μm InAs bilayer quantum dot lasers on GaAs substrate

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4 Author(s)
Li, L.H. ; Ecole Polytechnique Fed. de Lausanne, Inst. of Photonics & Quantum Electron., Lausanne, Switzerland ; Rossetti, M. ; Fiore, A. ; Patriarche, G.

An edge emitting quantum dot (QD) laser at 1430 nm is demonstrated with a structure grown by molecular beam epitaxy on GaAs substrate. The active region is based on three InAs bilayer QDs embedded in a conventional AlGaAs/GaAs waveguide. The threshold current density is 134 A/cm2. Output power of 23 mW per facet is achieved.

Published in:

Electronics Letters  (Volume:42 ,  Issue: 11 )