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Room-temperature continuous-wave operation of InAs quantum-wire laser on InP(001) substrate

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9 Author(s)
Yang, X.R. ; Key Lab. of Semicond. Mater. Sci., Chinese Acad. of Sci., Beijing, China ; Xu, B. ; Wang, Z.G. ; Jin, P.
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A self-assembled quantum-wire laser structure was grown by solid-source molecular beam epitaxy in an InAlGaAs-InAlAs matrix on InP(001) substrate. Ridge-waveguide lasers were fabricated and demonstrated to operate at a heatsink temperature up to 330 K in continuous-wave (CW) mode. The emission wavelength of the lasers with 5 mm-long cavity was 1.713 μm at room temperature in CW mode. The temperature stability of the devices was analysed and the characteristic temperature was found to be 47 K in the range of 220-320 K.

Published in:

Electronics Letters  (Volume:42 ,  Issue: 13 )

Date of Publication:

22 June 2006

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