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Electromigration of 96.5Sn-3Ag-0.5Cu flip-chip solder bumps bonded on substrate pads of Au/Ni/Cu or Cu metallization

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4 Author(s)
Yi-Shao Lai ; Stress-Reliability Lab., Adv. Semicond. Eng., Inc., Kaohsiung ; Chiu-Wen Lee ; Ying-Ta Chiu ; Yu-Hsiu Shao

Designed experiments are conducted in this paper to study the effect of Au/Ni/Cu or Cu substrate pad metallization on the electromigration reliability of 96.5Sn-3Ag-0.5Cu flip-chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy. Electromigration patterns are investigated in solder bumps under a current stressing condition with an average current density of about 5 kA/cm2 at an ambient temperature at 150 degC. Experiments show that test vehicles with Cu metallization exhibit better electromigration reliability compared to those with Au/Ni/Cu metallization. Corresponding failure mechanisms are proposed based on the observations of microstructures inside current stressed solder bumps

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Electronic Components and Technology Conference, 2006. Proceedings. 56th

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