Cart (Loading....) | Create Account
Close category search window
 

Fabrication of high aspect ratio 35 /spl mu/m pitch interconnects for next generation 3-D wafer level packaging by through-wafer copper electroplating

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Dixit, Pradeep ; Sch. of Mech. & Aerosp. Eng., Nanyang Technol. Univ., Singapore ; Jianmin Miao

3-D wafer level packaging is one of the key technologies to fabricate next generation compact, highly dense and high speed electronic devices. In order to realize these future nanoscale IC devices, fabrication of through-wafer interconnects with ultra fine pitch, is the foremost requirement. High aspect ratio through-wafer interconnects connect several devices in vertical axis and thus offer the shortest possible interconnection length. Due to the shortest interconnect length, parasitic losses and time delay during signal propagation is the minimum, which result in faster speed. In this paper, we report the fabrication of very high aspect ratio (~15) ultra fine pitch (-35 mum) through-wafer copper interconnects by innovative electroplating process. In this technique, process parameters are continuously varied as the electroplating process goes on. To reduce the chances of void formation and to ensure the complete wetting of via surface with copper electrolyte, hydrophilic nature of vias surface is increased. Copper interconnects having diameter as low as 15 mum and height as high as 400 mum have been fabricated by above technique. Vertically standing and smooth copper interconnects with very fine grains are obtained, which are characterized by SEM

Published in:

Electronic Components and Technology Conference, 2006. Proceedings. 56th

Date of Conference:

0-0 0

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.