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Embedded active device packaging technology for next-generation chip-in-substrate package, CiSP

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6 Author(s)
Cheng-Ta Ko ; Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst., Hsinchu ; Shoulung Chen ; Chia-Wen Chiang ; Tzu-Ying Kuo
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As the demands for high-density, high-speed, high-performance, and multi-function in portable electronic products, packaging technologies require significant improvement to bring out ICs' performance and shrink the total module or package size. One representative technology is to embed active devices into an organic substrate by sequential build-up processes, for example, chip-in-polymer by IZM, bumpless build-up layer by Intel, and chip-in-substrate package (CiSP) by EOL/ITRI. Through embedding the semiconductor chip in the organic substrate, the package with very good electrical performance and good capability for system integration can be realized. In this research, DDRII memory was chosen as the CiSP test vehicle, and the designed structure provides better electrical and thermal performance. Several core techniques, such as wafer thinning, die bonding, high-flatness lamination, were well developed to embed DDRII-like thin chips (50 mum thick) into dielectric material on a carrier substrate. The PCB compatible laser drilling, via metallization, and patterning technologies were subsequently followed to form an electric path from chip-pad to outer, which provides shorter interconnection for the demand of fast electrical response application. Moreover, the vehicle was tested by lead-free reliability tests, inclusive of pre-condition (3 reflows at 260degC), level B thermal cycle, and 168 hrs PCT tests. The newest results of the reliability tests will be presented in the paper

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Electronic Components and Technology Conference, 2006. Proceedings. 56th

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