By Topic

The fast neutron response of 4H silicon carbide semiconductor radiation detectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
F. H. Ruddy ; Dept. of Sci. & Technol., Westinghouse Electr. Corp., Pittsburgh, PA, USA ; A. R. Dulloo ; J. G. Seidel ; M. K. Das
more authors

Fast neutron response measurements are reported for radiation detectors based on large-volume SiC p-i-n diodes. Multiple reaction peaks are observed for 14-MeV neutron reactions with the silicon and carbon nuclides in the SiC detector. A high degree of linearity is observed for the 28Si(n,αi) reaction set of six energy levels in the product 25Mg nucleus, and pulse height defect differences between the observed 12C(n,α0)28 Si(n,αi) energy responses are discussed. Energy spectrometry applications in fission and fusion neutron fields are also discussed.

Published in:

IEEE Transactions on Nuclear Science  (Volume:53 ,  Issue: 3 )