Referenced Items are not available for this document.
This paper presents a study of the ionizing radiation tolerance of 0.13 μm CMOS transistors, in view of the application to the design of rad-hard analog integrated circuits. Static, signal and noise parameters of the devices were monitored before and after irradiation with 60Co γ-rays at a 10 Mrad total ionizing dose. The effects on key parameters such as threshold voltage shift and 1/f noise are studied and compared with the behavior under irradiation of devices in previous CMOS generations.
Published in:
Nuclear Science, IEEE Transactions on
(Volume:53
,
Issue:
3
)
Date of Publication: June 2006
- Page(s):
- 1599 - 1606
- ISSN :
- 0018-9499
- INSPEC Accession Number:
- 8982416
- Digital Object Identifier :
- 10.1109/TNS.2006.871802
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 26 June 2006
- Issue Date :
- June 2006
- Sponsored by :
- IEEE Nuclear and Plasma Sciences Society
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