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Total ionizing dose effects on the noise performances of a 0.13 μm CMOS technology

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5 Author(s)
Re, V. ; Universita di Bergamo, Pavia, Italy ; Manghisoni, M. ; Ratti, L. ; Speziali, V.
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This paper presents a study of the ionizing radiation tolerance of 0.13 μm CMOS transistors, in view of the application to the design of rad-hard analog integrated circuits. Static, signal and noise parameters of the devices were monitored before and after irradiation with 60Co γ-rays at a 10 Mrad total ionizing dose. The effects on key parameters such as threshold voltage shift and 1/f noise are studied and compared with the behavior under irradiation of devices in previous CMOS generations.

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Nuclear Science, IEEE Transactions on  (Volume:53 ,  Issue: 3 )