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A low-power high-performance SiGe BiCMOS 802.11a/b/g transceiver IC for cellular and bluetooth Co-existence applications

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22 Author(s)
O. Charlon ; Philips Semicond., San Jose, CA, USA ; M. Locher ; H. A. Visser ; D. Duperray
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This paper describes a high-performance WLAN 802.11a/b/g radio transceiver, optimized for low-power in mobile applications, and for co-existence with cellular and Bluetooth systems in the same terminal. The direct-conversion transceiver architecture is optimized in each mode for low-power operation without compromising the challenging RF performance targets. A key transceiver requirement is a sensitivity of -77 dBm (at the LNA input) in 54 Mb/s OFDM mode while in the presence of a GSM1900 transmitter interferer. The receiver chain achieves an overall noise figure of 2.8/3.2 dB, consuming 168/185 mW at 2.8 V for the 2.4/5GHz bands, respectively. Signal loopback and transmit power detection techniques are used in conjunction with the baseband modem processor to calibrate the transmitter LO leakage and the transceiver I/Q imbalances. Fabricated in a 70 GHz fT 0.25-mum SiGe BiCMOS technology for system-in-package (SiP) use, the dual-band, tri-mode transceiver occupies only 4.6 mm2

Published in:

IEEE Journal of Solid-State Circuits  (Volume:41 ,  Issue: 7 )