By Topic

Role of anode hole injection and valence band hole tunneling on interface trap generation during hot carrier injection stress

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Saha, D. ; Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India ; Varghese, D. ; Mahapatra, S.

Interface trap (NIT) generation and recovery due to broken ≡Si-H bonds at the Si/SiO2 interface is studied during and after hot carrier injection (HCI) stress and verified by a two-dimensional reaction-diffusion model. NIT generation and recovery characteristics do not correlate with channel hot electron (HE) density distribution (verified by Monte Carlo simulations). Anode hole injection, which is triggered by HE injection into the gate poly, and valence band hole tunneling, which is triggered for thinner oxides, must be invoked to properly explain experimental results. The observed hole-induced, not electron-induced, breaking of ≡Si-H bonds during HCI stress is also consistent with that for negative bias temperature instability stress.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 7 )