Cart (Loading....) | Create Account
Close category search window
 

Enhanced crystallization and improved reliability for low-temperature-processed poly-Si TFTs with NH3-plasma pretreatment before crystallization

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ching-Lin Fan ; Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan ; Hui-Lung Lai ; Yang, Tsung-Hsien

NH3-plasma pretreatment before crystallization was performed for the first time on low-temperature-processed poly-Si thin-film transistors (TFTs). TFTs after pretreatment can significantly reduce the thermal crystallization time of amorphous silicon from 24 to 4 h. The pretreatment can also improve device performance and hot-carrier resistivity. It was attributed to the defect-state passivation of nitrogen that is piled-up near the poly-Si film surface, which helps to terminate the dangling bonds in poly-Si thin film in place of weaker Si-H and/or Si-Si bonds. This new scheme provides a simple and effective method to decrease α-Si film crystallization time and simultaneously improve device performance and reliability.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 7 )

Date of Publication:

July 2006

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.