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Half-terahertz operation of SiGe HBTs

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7 Author(s)
Krithivasan, R. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Yuan Lu ; Cressler, J.D. ; Jae-Sung Rieh
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This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency. An extracted peak unity gain cutoff frequency (fT) of 510 GHz at 4.5 K was measured for a 0.12×1.0 μm2 SiGe HBT (352 GHz at 300 K) at a breakdown voltage BVCEO of 1.36 V (1.47 V at 300 K), yielding an fT×BVCEO product of 693.6 GHz-V at 4.5 K (517.4 GHz-V at 300 K).

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 7 )

Date of Publication:

July 2006

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