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Three-mask polycrystalline silicon TFT with metallic gate and junctions

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2 Author(s)
Dongli Zhang ; Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China ; Man Wong

Polycrystalline silicon thin-film transistors (TFTs) with metallic gates and junctions realized using a three-mask metal-replaced junction (MERJ) technology have been fabricated and characterized. Compared to those of a conventional TFT, the process of making a MERJ TFT is simplified, and the resistance of the junctions and gate is reduced. The low resistance of the metallic junctions allows a greater recovery of the intrinsic characteristics of a MERJ TFT, and the reduced signal delay on a low-resistance metallic gate line makes the TFT particularly suitable for realizing large-area active-matrix flat-panel displays.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 7 )

Date of Publication:

July 2006

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