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Power amplifier characterization: an active load-pull system based on six-port reflectometer using complex modulated carrier

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4 Author(s)
S. Bensmida ; Dept. Commun. et Electronique, Ecole Nat. Superieure des Telecommun., Paris, France ; E. Bergeault ; G. I. Abib ; B. Huyart

An original measurement system for nonlinear RF power-transistor characterization is presented. This new setup enables measurement and optimization of output power, power-added efficiency (PAE), or linearity using active fundamental tuning and six-port reflectometers as vector network analyzers. High- and low-frequency bias-tees are inserted at both ports of transistors in order to control source and load impedances at the baseband (envelope) frequency. Experimental results at 1.575 GHz show an adjacent channel power ratio improvement of 20 dB for a commercial GaAs MESFET power transistor operating in class AB. Moreover, the output power and PAE are increased by 1 dB and ten points, respectively

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:54 ,  Issue: 6 )