Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Optical Design of InAlGaAs Low-Loss Tunnel-Junction Apertures for Long-Wavelength Vertical-Cavity Lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

We report on the optical design of thin selectively etched InAlGaAs tunnel-junction apertures for the realization of optically efficient long-wavelength vertical-cavity surface-emitting lasers (VCSELs). These apertures were designed to introduce minimal optical loss to the structure, facilitate single-mode operation, and yield optical mode diameters that better match the injected current density profile. We then demonstrate InP-based VCSELs emitting at 1304 nm utilizing these low-loss InAlGaAs apertures, resulting in optically efficient low-loss devices with differential quantum efficiencies of up to 60%.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:42 ,  Issue: 5 )