Referenced Items are not available for this document.
The electrical performance of AlGaN/InGaN/GaN heterostructure field effect transistors (HFETs) with and without an InGaN channel layer is studied. Four structures with InGaN carrier confinement layers of 0, 100, 300 and 500 Å thickness were deposited. The channel of InGaN layer was found to enhance the sheet concentration. The gate length is 1 μm. The Al0.32Ga0.68N/In0.1Ga0.9N/GaN HFET device with a 500 Å InGaN channel layer has maximum drain current (518 mA/mm) and maximum intrinsic transconductance (167 mS/mm).
Published in:
Electronics Letters
(Volume:42
,
Issue:
12
)
Date of Publication: 8 June 2006
- Page(s):
- 718 - 719
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 9048880
- Digital Object Identifier :
- 10.1049/el:20060674
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 19 June 2006
- Issue Date :
- 8 June 2006
- Sponsored by :
- Institution of Engineering and Technology
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