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Influence of InGaN channel thickness on electrical characteristics of AlGaN/InGaN/GaN HFETs

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3 Author(s)
Wang, R.-L. ; Dept. of Microelectron. Eng., Nat. Kaohsiung Marine Univ., Taiwan ; Su, Y.K. ; Chen, K.-Y.

The electrical performance of AlGaN/InGaN/GaN heterostructure field effect transistors (HFETs) with and without an InGaN channel layer is studied. Four structures with InGaN carrier confinement layers of 0, 100, 300 and 500 Å thickness were deposited. The channel of InGaN layer was found to enhance the sheet concentration. The gate length is 1 μm. The Al0.32Ga0.68N/In0.1Ga0.9N/GaN HFET device with a 500 Å InGaN channel layer has maximum drain current (518 mA/mm) and maximum intrinsic transconductance (167 mS/mm).

Published in:

Electronics Letters  (Volume:42 ,  Issue: 12 )