By Topic

Fast simulated diffusion: an optimization algorithm for multi-minimum problems and its application to MOSFET model parameter extraction

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Sakurai, T. ; Toshiba Corp., Kawasaki, Japan ; Ichida, M. ; Newton, A.R.

A novel algorithm, fast simulated diffusion (FSD), is proposed to solve a multiminimal optimization problem on multidimensional continuous space. The algorithm performs a greedy search and a random search alternately and can find a global minimum with a practical success rate. An efficient hill-decending method for the greedy search is proposed. When the FSD is applied to a set of standard test functions, it shows an order-of-magnitude faster speed than the conventional simulated diffusion. An application of the FSD to a MOSFET parameter extraction problem is described

Published in:

Custom Integrated Circuits Conference, 1991., Proceedings of the IEEE 1991

Date of Conference:

12-15 May 1991