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Preparation of Pb(Zr,Ti)O3 ferroelectric thin films by a pulsed laser ablation technique

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4 Author(s)
Jingping, Xu ; Dept. of Solid State Electron., Huazhong Univ. of Sci. & Technol., Wuhan, China ; Bai Tiecheng ; An Chengwu ; Li Xing Jiao

Ferroelectric thin films of Pb(Zr,Ti)O3 have been fabricated on polished silicon wafers by a pulsed laser ablation technique at substrate temperature of 100-200°C. The ferroelectric properties of the thin films can be greatly improved by a post-deposition laser annealing. Some factors which affect the quality of thin films were investigated. The structures of thin films were analyzed by X-ray diffraction. The Curie temperature and hysteresis loops of PZT ferroelectric thin films were measured

Published in:

Electronic Components and Technology Conference, 1991. Proceedings., 41st

Date of Conference:

11-16 May 1991