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New methodology for ultra-fast detection and reduction of non-visual defects at the 90nm node and below using comprehensive e-test structure infrastructure and in-line DualBeamTM FIB

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5 Author(s)

This paper describes a methodology to quickly capture, characterize, prioritize, localize, and perform in-line FA on killer defects. The system, which includes comprehensive short-flow test wafers, fast inline e-test, a powerful data analysis system, and advanced in-line dual beam inspection, was demonstrated in a leading-edge 300mm fab at the 90nm technology node to detect and resolve both systematic and random defect mechanisms greater than 10times faster than traditional methods. This article describes several examples of detecting and resolving non-visual (subsurface) as well as visual defects for both back-end and front-end issues

Published in:

Advanced Semiconductor Manufacturing Conference, 2006. ASMC 2006. The 17th Annual SEMI/IEEE

Date of Conference:

22-24 May 2006