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The Development of the Non-contact Electrical Leakage Property Measurement System for the High-K Dielectric Materials on DRAM Capacitors

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5 Author(s)
Yusin Yang ; Samsung Electron. Co., Hwasung ; Byung Sug Lee ; Misung Lee ; Chung Sam Jun
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We have used the non-contact electrical property measurement system to characterize the electrical leakage property of high-K materials such as Al2O3 and HfO2 on a patterned wafer. The basic technology is to measure the surface voltage with micro Kelvin probe after the corona charge deposition on a measurement area. Because of the charge decay through a dielectric material, voltage-time spectra follow exponential time dependence that is the characteristic of leakage induced charge decay. We have measured the electrical leakage property of the storage capacitors on the direct cell area of DRAM device. The measured electrical leakage property can be classified according to the thickness of Al2O3 and HfO2. Since the electrical leakage property depends on a thickness of a dielectric material, voltage-time spectra show different shapes according to the HfO2 thickness. Using the technology, we can monitor the electrical leakage property of the storage capacitors of high-K materials on the direct cell area

Published in:

Advanced Semiconductor Manufacturing Conference, 2006. ASMC 2006. The 17th Annual SEMI/IEEE

Date of Conference:

22-24 May 2006

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