Gate capacitances behavior of nanometer FD SOI CMOS devices with HfO₂ high-k gate dielectric considering vertical and fringing displacement effects using 2-D Simulation

This paper reports the gate-source (drain)/source (drain)-gate capacitance behavior of 100-nm fully depleted silicon-on-insulator CMOS devices with HfO₂ high-k gate dielectric considering vertical and fringing displacement effects. Based on the two-dimensional simulation results, a unique two-step C_S(D)G/C_GS versus V_G curve could be identified for the device with the 1.5-nm HfO₂ gate dielectric due to the vertical and fringing displacement effects.