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Negative-bias temperature instability cure by process optimization

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10 Author(s)
A. Scarpa ; ICN Philips Semicond., Nijmegen, Netherlands ; D. Ward ; J. Dubois ; L. van Marwijk
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Negative-bias temperature instability (NBTI) is a major challenge for modern integrated circuits and may represent a key factor for the success of a technology. In this paper, NBTI is approached from a process point of view, providing a general picture of the manufacturing process steps that affect NBTI performance. It is found that several process steps may be optimized to reduce the NBTI susceptibility of p-type MOSFETs. The choice of the cure approach depends on the device application, on the technology, and also on the equipment.

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IEEE Transactions on Electron Devices  (Volume:53 ,  Issue: 6 )