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High-power-density 4H-SiC RF MOSFETs

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10 Author(s)
Gudjonsson, G. ; Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Goteborg, Sweden ; Allerstam, F. ; Olafsson, H.O. ; Nilsson, P.A.
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The authors have made the first 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors withstand 200 V drain voltage, are normally off, and show no gate lag, which is often encountered in SiC MESFETs. The measured devices have a single drain finger and a double gate finger, and a total gate width of 0.8 mm. To their knowledge, this is the first time that power densities above 1 W/mm at 3 GHz are reported for SiC MOSFETs.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 6 )