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Hole mobility in ultrathin body SOI pMOSFETs with SiGe or SiGeC channels

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5 Author(s)
J. Hallstedt ; Sch. of Inf. & Commun. Technol., R. Inst. of Technol., Kista, Sweden ; M. von Haartman ; P. -E. Hellstrom ; M. Ostling
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The hole mobilities of SiGe and SiGeC channel pMOSFETs fabricated on ultrathin silicon-on-insulator substrates are investigated and compared with reference Si channel devices. The total thickness of the fully depleted Si/SiGe(C)/Si body structure is ∼ 25 nm. All devices demonstrated a near ideal subthreshold behavior, and the drive current and mobility were increased with more than 60% for SiGe and SiGeC channels. When comparing SIMOX and UNIBOND substrates, no significant difference could be detected.

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IEEE Electron Device Letters  (Volume:27 ,  Issue: 6 )