An accurate small-signal model for AlGaN-GaNHEMT suitable for scalable large-signal model construction

The validity of the proposed small-signal model (SSM) and the developed extraction method in for large GaN devices is investigated. Extraction of parasitic elements is performed for different size devices to show the scaling of these elements with the gate width. The model shows a very good result for describing the parasitic distributed effect, which is considerable for large devices.