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A single-supply Ku-band 1-W power amplifier MMIC with compact self-bias PHEMTs

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9 Author(s)
Hong-Zhi Liu ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Che-Hung Lin ; Chen-Kuo Chu ; Huang, Hou-Kuei
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In this letter, the design of a self-bias 1.8-mm AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor with a compact source capacitor for operation in Ku-band frequency is described. Based on the proposed device, a self-bias Ku-band 1-W two-stage power amplifier monolithic microwave integrated circuit (MMIC) is also demonstrated. Under a single bias condition of 8 V and 630 mA, the self-bias MMIC possesses 14.2-dB small-signal gain, 30.2-dBm output power at 1-dB gain compression point with 19.2% power added efficiency and 31.3-dBm saturated output power with 22.5% power added efficiency at 14GHz. With the performance comparable to the dual-bias MMIC counterpart, the proposed self-bias MMIC is more attractive to system designers on very small aperture terminal applications.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:16 ,  Issue: 6 )