Referenced Items are not available for this document.
A miniature Q-band low noise amplifier (LNA) using 0.13-μm standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20dB at 43GHz with a compact chip size of 0.525mm2. The 3-dB frequency bandwidth ranges from 34 to 44GHz and the minimum noise figure is 6.3dB at 41GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size.
Published in:
Microwave and Wireless Components Letters, IEEE
(Volume:16
,
Issue:
6
)
Date of Publication: June 2006
- Page(s):
- 327 - 329
- ISSN :
- 1531-1309
- INSPEC Accession Number:
- 8936504
- Digital Object Identifier :
- 10.1109/LMWC.2006.875628
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 30 May 2006
- Issue Date :
- June 2006
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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