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A miniature Q-band low noise amplifier using 0.13-μm CMOS technology

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5 Author(s)
Jeng-Han Tsai ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Wei-Chien Chen ; To-Po Wang ; Tian-Wei Huang
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A miniature Q-band low noise amplifier (LNA) using 0.13-μm standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20dB at 43GHz with a compact chip size of 0.525mm2. The 3-dB frequency bandwidth ranges from 34 to 44GHz and the minimum noise figure is 6.3dB at 41GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:16 ,  Issue: 6 )