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60 GHz GaAs MMIC mixers with integrated LO buffer

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2 Author(s)
Maas, A.P.M. ; TNO Defence, Security & Safety, Netherlands ; Hoogland, J.A.

Using the 0.15 /spl mu/m GaAs mHEMT process from WIN semiconductors, two 60 GHz down-conversion mixers have been designed, processed and measured. Both designs include a LO buffer amplifier to allow for a reduced external LO power level. With an LO power of +10 dBm, the measured RF input match is better than -15 dB at 60 GHz and the conversion loss is below 8 dB at 2 GHz intermediate frequency.

Published in:

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Date of Conference:

3-4 Oct. 2005

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