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Frequency domain-based extraction method of one-port device's non-linear state functions from large-signal measurements

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2 Author(s)
T. M. Martin-Guerrero ; Departamento de Ingenieria de Comunicaciones, Univ. de Malaga, Spain ; C. Camacho-Penalosa

A novel frequency domain-based method for the extraction of one-port device's non-linear constitutive relations directly from vector large-signal measurements is presented. A distinctive characteristic of the method is that it provides directly the charge-voltage state-function, without the need to perform the integration of the capacitance-voltage function as required by its time domain-based counterpart. The capabilities of the method are demonstrated by extracting the non-linear state-functions of a microwave diode from large-signal data generated by harmonic balance analysis, and the non-linear gate-source state-functions of a HEMT device under 'cold-FET' bias conditions from measured data.

Published in:

European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005

Date of Conference:

3-4 Oct. 2005