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Power gain analysis of SiGe HBTs with constant Ge strain

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2 Author(s)
Ningyue Jiang ; Dept. of Electr. & Comput. Eng., Wisconsin-Madison Univ., Madison, WI, USA ; Zhenqiang Ma

The power gain of SiGe HBTs with constant total Ge content (strain) but different doping profiles is studied under common-emitter (CE) and common-base (CB) configurations. It is found that CE and CB configurations show different power gain sensitivity on doping concentration and bias condition. The sensitivity of f/sub max/ on Ge profile and doping profile is also investigated.

Published in:

European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005

Date of Conference:

3-4 Oct. 2005