Power gain analysis of SiGe HBTs with constant Ge strain

The power gain of SiGe HBTs with constant total Ge content (strain) but different doping profiles is studied under common-emitter (CE) and common-base (CB) configurations. It is found that CE and CB configurations show different power gain sensitivity on doping concentration and bias condition. The sensitivity of f/sub max/ on Ge profile and doping profile is also investigated.