By Topic

Multi-frequency laser monolithically integrating InGaAsP gain elements with amorphous silicon AWG

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

13 Author(s)
Kwakernaak, M.H. ; Sarnoff Corp., Princeton, NJ, USA ; Chan, W.K. ; Maley, N. ; Mohseni, H.
more authors

We demonstrate a photonic integrated circuit using a novel monolithic integration platform combining InGaAsP gain elements and index matched amorphous silicon waveguide devices. The AWG based multi-frequency laser emits eight 100-GHz-spaced wavelengths near 1550 nm.

Published in:

Optical Fiber Communication Conference, 2006 and the 2006 National Fiber Optic Engineers Conference. OFC 2006

Date of Conference:

5-10 March 2006