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A 10-GHz bandwidth pseudomorphic GaAs/InGaAs/AlGaAs MODFET-based OEIC receiver

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7 Author(s)
Ketterson, A. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL ; Seo, J.-W. ; Tong, M. ; Nummila, K.
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Summary form only given. High-performance quarter-micrometer pseudomorphic modulation-doped field-effect transistors (MODFETs) and a metal-semiconductor-metal (MSM) photodetector have been used in the design of a 0.85-μm wavelength sensitive high-speed OEIC (optoelectronic integrated circuit) lightwave receiver. The receiver circuit utilizes a transimpedance amplifier topology with all active components including a variable active feedback resistor consisting of a common-gate FET. Discrete MODFETs with -0.7-V thresholds exhibit transconductances of over 500 mS/mm and fTs of ~70 GHz. Receiver transimpedance gains (ZT) from 200 to 1500 Ω are obtained by varying the active feedback resistor. An amplifier 3-dB analog bandwidth of 10 GHz is measured with a maximally flat ZT response of 300 Ω, resulting in a transimpedance-bandwidth product of 3 THz-Ω. The receiver frequency response, deduced from optical pulse measurements, confirms a 10-GHz bandwidth and indicates that the receiver is suitable for unequalized 18-Gb/s NRZ communications

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Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 11 )