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A new failure mechanism and its improvement on gate oxide reliability at field edge by LOCOS isolation

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5 Author(s)
Takahashi, M. ; Oki Electric Industry Co. Ltd., Tokyo ; Uchida, H. ; Nagatomo, Y. ; Hirashita, N.
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Summary form only given. A new failure mechanism of gate oxide at the field oxide edge by LOCOS isolation has been found. The gate oxide reliability is degraded by the buildup of positive charges in addition to the thinning. Both effects can be reduced by a high-temperature annealing after gate oxidation and wet gate oxidation

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Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 11 )