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OR and NOR Logic Circuit Design Using Negative Differential Resistance Device Fabricated by CMOS Process

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5 Author(s)
Kwang-Jow Gan ; Department of Electronic Engineering, the Kun Shan University, Taiwan ; Dong-Shong Liang ; Cher-Shiung Tsai ; Yaw-Hwang Chen
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Logic circuit based on the negative differential resistance (NDR) device is demonstrated. This basic NDR device is made of four metal-oxide-semiconductor field-effect-transistor (MOS) devices that could exhibit the NDR characteristic in the current-voltage oltage curve by suitably arranging the parameters of the MOS devices. The OR and NOR logic operation will be demonstrated based on the NDR devices and circuits. The devices and circuits are implemented by the standard 0.35μm CMOS process.

Published in:

Electron Devices and Solid-State Circuits, 2005 IEEE Conference on

Date of Conference:

19-21 Dec. 2005

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