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High-mobility fully depleted thin-film SOS MOSFET's

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4 Author(s)
Roser, M. ; US Naval Command, Control & Ocean Surveillance Center, San Diego, CA ; Clayton, S.R. ; De La Houssaye, P.R. ; Garcia, G.A.

Summary form only given. Transistor characteristics for improved, fully depleted thin-film (100-nm thick) silicon-on-sapphire (SOS) MOSFETs with 25-nm gate oxides were measured for various gate lengths from 15 to 300 K with measurements taken at 10 K intervals. Peak hole mobilities as high as 250 cm2/V-s at 300 K and 1700 cm2 /V-s at 77 K were measured in p-channel MOSFETs. Measurements of corresponding n-channel devices of the same dimensions have revealed electron mobilities of 360 cm2/V-s at 300 K and 590 cm2 /V-s at 77 K. The high hole mobility behavior unique to SOS may be attributed to stress in the thin silicon film due to the sapphire interface

Published in:

Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 11 )

Date of Publication:

Nov 1992

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