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Device fabricated on selective buried oxide (SEL-BOX) substrates have the potential for high performance while overcoming the drawbacks of floating body effects that afflict silicon on insulator (SOI) devices. Thus SEL-BOX technology is ideally suited for System-on-Chip applications. This paper reports simulation studies of MOSFETs fabricated on SEL-BOX substrates and compares the device and circuit characteristics with those of devices on SOI and bulk-silicon substrates. The ability to control device parameters, especially the device threshold voltage, by varying the spacing in the buried oxide and the scalability of devices makes SEL-BOX a promising technology.