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Hydrogenation effects on polysilicon thin-film transistor structures

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3 Author(s)
M. K. Hatalis ; Dept. of Electr. Eng. & Comput. Sci., Lehigh Univ., Bethlehem, PA ; J. H. Kung ; J. Kanicki

Summary form only given. The authors have investigated the hydrogenation of various polysilicon TFT (thin-film transistors) structures in a parallel-plate reactor and studied the effect of plasma frequency (30 kHz or 13.56 MHz) on the device characteristics. The device structures included non-self-aligned metal gate, self-aligned polysilicon gate, and offset polysilicon gate. Both polysilicon- and metal-gate structures improved after the hydrogenation at 30 kHz. The subthreshold slope of polysilicon gate TFTs was lower by a factor of two than that of metal gate, showing that the polysilicon gate results in a more efficient hydrogenation of the device structure. The hydrogenation at 13.56 MHz either marginally improves the devices or under certain conditions actually degrades them. Electrical stress of n-channel TFTs ( L=10 μm, W=50 μm) from the same substrate that were hydrogenated at different plasma frequencies was measured at room temperature under bias stress conditions of Vgs=20 V and Vds=20 V. The threshold voltage (VT) was 0.46 V after the 30-kHz hydrogenation and became 0.5 V after stressing for 3×104 s. This decrease in the threshold voltage is indicative of the movement of positive charges in the gate dielectric

Published in:

IEEE Transactions on Electron Devices  (Volume:39 ,  Issue: 11 )