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Low-threshold GaInAsSb/AlGaAsSb quantum-well ridge-waveguide lasers emitting at 2.1 μm

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3 Author(s)
Choi, H.K. ; MIT, Lincoln Lab., Lexington, MA ; Eglash, S.J. ; Connors, M.K.

Summary form only given. The authors report on a laser structure consisting of the following layers grown on an n-GaSb substrate by molecular beam epitaxy: n-GaSb buffer, n-AlGaAsSb cladding, active consisting of GaInAsSb wells and AlGaAsSb barriers, p-AlGaAsSb cladding, and p+-GaSb contacting. Ridges 8-μm wide were defined by reactive ion etching. For CW operation of a 300-μm-long device at a heat-sink temperature of 20°C, the threshold current is 29 mA and the maximum power is 12.5 mW/facet limited by junction heating. Initial slope efficiency is ~0.1 W/A per facet. Fundamental-mode emission is maintained up to 200 mA, with lateral full width at half maximum (FWHM) of 15°. For the transverse far-field pattern, the FWHM is ~50°. The emission spectra show multiple longitudinal modes at ~2.13 μm

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Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 11 )