Referenced Items are not available for this document.
Summary form only given. The authors report the first successful room-temperature pulsed operation of InGaAs strained-layer multiquantum-well (SL-MQW) injection lasers grown by MOVPE (metal-organic vapor-phase epitaxy) on InP substrates in the 1.8-μm range. The threshold current density and external differential quantum efficiency of 10-μm-wide ridge waveguide lasers were 2.5 kA/cm2 and 5% for 1-mm and 400-μm-long cavities, respectively. The laser structure consists of four 35-Å-wide In0.75Ga0.25As SL-QWs separated by 65-Å-wide barrier layers of lattice-matched InGaAs. The MQW is further sandwiched between 150 nm of InGaAsP (λ=1.3 μm) and 2 μm of InP on both sides
Published in:
Electron Devices, IEEE Transactions on
(Volume:39
,
Issue:
11
)
Date of Publication: Nov 1992
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 4327196
- Digital Object Identifier :
- 10.1109/16.163527
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Nov 1992
- Sponsored by :
- IEEE Electron Devices Society
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