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Room-temperature operation of MOCVD-grown GaInAs/InP strained-layer multiquantum-well lasers in the 1.8-μm range

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4 Author(s)
Forouhar, S. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA ; Larsson, A. ; Ksendzov, A. ; Lang, R.J.

Summary form only given. The authors report the first successful room-temperature pulsed operation of InGaAs strained-layer multiquantum-well (SL-MQW) injection lasers grown by MOVPE (metal-organic vapor-phase epitaxy) on InP substrates in the 1.8-μm range. The threshold current density and external differential quantum efficiency of 10-μm-wide ridge waveguide lasers were 2.5 kA/cm2 and 5% for 1-mm and 400-μm-long cavities, respectively. The laser structure consists of four 35-Å-wide In0.75Ga0.25As SL-QWs separated by 65-Å-wide barrier layers of lattice-matched InGaAs. The MQW is further sandwiched between 150 nm of InGaAsP (λ=1.3 μm) and 2 μm of InP on both sides

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Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 11 )