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Reliable 100-mW strained-layer ridge waveguide lasers

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6 Author(s)
Heath, L.S. ; Polaroid Corp., Cambridge, MA ; Meehan, K. ; Chin, A.K. ; Zarrabi, J.H.
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Summary form only given. Reliable operation of InGaAs quantum-well strained-layer single-mode ridge waveguide lasers at 100 mW has been achieved. A separate-confinement, In0.2Ga0.8As single-quantum-well heterostructure was grown by metal-organic chemical vapor deposition. The lasers operate in the fundamental transverse mode to 100 mW, and in higher order modes to a maximum output power of 300 mW, where thermal rollover occurs. Nine lasers were aged at 25°C for 1000 h at constant current corresponding initially to a power of 100 mW. After aging, the current required to obtain 100 mW increased by 3% on average. The median lifetime for these lasers is estimated to be 40000 h

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Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 11 )