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High-speed GaAs/AlGaAs multiple-quantum-well lasers: design and characterization

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8 Author(s)
Esquivias, I. ; Fraunhofer-Inst. fuer Angewandte Festkorperphys., Freiburg ; Weisser, S. ; Ralston, J.D. ; Gallagher, D.F.G.
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Summary form only given. The authors have developed GaAs/AlGaAs multiple-quantum-well (MQW) lasers with direct modulation bandwidths of 16 GHz. The devices utilize a compact vertical layer structure which also makes them particularly suitable for integration. The theoretical calculations leading to this optimized design as well as the DC and high-frequency characteristics of the lasers are discussed. A 3-dB electrical modulation bandwidth of 16 GHz was achieved at 90-mA pulsed bias in a 4-μm×200-μm device. The slope of the plot of the resonance frequency versus the square root of the optical power yielded values of dg/dn ranging between 4×10-16 and 7×10 -16 cm2 for short-cavity-length and narrow-mesa-width lasers

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Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 11 )