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High-speed InP/InGaAs p-n-p heterojunction bipolar transistors

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3 Author(s)
Lunardi, L.M. ; AT&T Bell Labs., Holmdel, NJ ; Chandrasekhar, S. ; Hamm, R.A.

Summary form only given. The authors report InP/InGaAs p-n-p HBTs (heterojunction bipolar transistors), grown by metal-organic molecular beam epitaxy (MOMBE) and demonstrate large current gain and high speed. A transistor with an emitter dimension of 3×8 gmm2 had a common emitter current gain of 30 at a collector current density of 2×104 A/cm2. Microwave on-wafer measurements were done to characterize the small-signal performance of the transistors. The unity gain cutoff frequency fT was 12 GHz and the inferred maximum oscillation frequency fmax was 20 GHz, at a collector current of 2.5 mA and a collector-to-emitter voltage of 5.0 V

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Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 11 )