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Room-temperature pulsed operation of a 1.5-μm GaInAsP/InP vertical cavity surface emitting laser

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5 Author(s)
T. Tadokoro ; NTT Opto-Electron. Lab., Kanagawa ; H. Okamoto ; Y. Kohama ; T. Kawakami
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Summary form only given. Room-temperature operation of a current-injection near-1.55-μm GaInAsP/InP vertical-cavity surface emitting laser diode (VCSELD) was achieved. The double heterostructure was grown by metal-organic chemical vapor deposition on a (100) n-type InP substrate. The sample consisted of a 34-pair GaInAsP (λg =1.4 μm)/InP DBR, a 0.88-μm-thick undoped GaInAsP active layer, a 0.49-μm-thick InP cladding layer, a 0.22-μm-thick GaInAsP contact layer, and a p-side metal-dielectric hybrid mirror (Au/Cr and 3.5×Si/SiO2)

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IEEE Transactions on Electron Devices  (Volume:39 ,  Issue: 11 )