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Browse Conference Publications > Information Acquisition, 2005 ... Help

Design of a silicon magnetodiodes array with self-compensation for temperature drift

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4 Author(s)
Dongfeng Zhang ; State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Anhui, China ; Deyi Kong ; Yongchun Tao ; Jianhua Shan

The paper describes the design of a silicon magnetodiodes array with self-compensation for temperature drift, which is used for perpendicular-plane magnetic field sensing. Individual sensor cells comprise a pair of silicon magnetodiodes with differential structure. The magnetodiodes array can be fabricated on the surface of high-resistivity silicon on insulator (SOI) with the combination of IC process and micro-electro-mechanical system (MEMS) techniques, the proposed fabrication process is provided.

Published in:
Information Acquisition, 2005 IEEE International Conference on

Date of Conference: 27 June-3 July 2005

Print ISBN:
0-7803-9303-1
INSPEC Accession Number:
8977248
Digital Object Identifier :
10.1109/ICIA.2005.1635070
Product Type:
Conference Publications

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