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53 GHz-fmax Si/SiGe heterojunction bipolar transistors

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3 Author(s)
Gruhle, A. ; Daimler-Benz AG, Ulm ; Kibbel, H. ; Kasper, E.

Summary form only given. The authors report Si/SiGe HBTs (heterojunction bipolar transistors) with a base sheet resistance of only 680 Ω/□, leading to a measured fmax of 53 GHz. The complete layer structure was grown by MBE (molecular beam epitaxy), including the single-crystal emitter with no need for a poly-drive-in anneal. Devices were built on high-resistivity substrates with As-implanted and diffused buried layers. A double-mesa structure using a self-aligned base metallization with respect to the emitters was employed. On-wafer high-frequency measurements from 0.5 to 26 GHz showed transit frequencies between 40 and 50 GHz for devices with 1-3 μm wide emitter fingers. The reduced base sheet resistance compared to earlier devices led to a maximum available gain at 26 GHz for a 1×16 μm device of 6.3 dB corresponding to a record fmax=53 GHz

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Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 11 )