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Two-dimensional analysis of ion-implanted, bipolar-compatible, long- and short-channel junction field-effect transistors

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2 Author(s)
Wong, W.W. ; Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA ; Liou, J.J.

A two-dimensional analysis of ion-implanted, bipolar-compatible, long- and short-channel JFETs is presented. The two-dimensional device simulator PISCES is used to study the steady-state characteristics. The linear and saturation regions are analyzed, and insight about the transition region between them is obtained. Short-channel JFET behavior deviates considerably from the conventional theory developed based on the gradual channel approximation, because the x-direction electric field in the channel of the short-channel JFET is much stronger than that in the long-channel JFET. The study shows that the short-channel JFET has several properties that were not previously emphasized: (a) no pinch-off in saturation operation: (b) free-carrier drift velocity saturates in saturation operation: and (c) power-law I-V characteristics in the cutoff region. Details regarding the shape of the conducting channel, the electric field vectors, the current vectors, and the current-voltage characteristics are provided

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Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 11 )