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High compositional uniformity of epitaxial InGaAlAs on InP grown by MOVPE for uncooled laser diode

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6 Author(s)
Shimizu, E. ; Dev. Center, Nikko-Materials Co., Ltd., Saitama ; Nakamura, M. ; Momoi, H. ; Ikeda, E.
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High compositional uniformity of InGaAlAs alloy on InP was demonstrated in a high-speed rotating disk MOVPE. The factors that influenced the compositional uniformity were investigated. PL wavelength range of less than 6 nm over 80% areas of 2-inch wafers was achieved at 1310 nm MQW structure with multiple wafers. Laser characteristic profile was good linearity and slope efficiency. The characteristics temperature, T0, was 95.5 K over a temperature range from 25 to 85 degrees Celsius

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Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on

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