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Strained InGaAs quantum well vertical cavity surface emitting lasers emitting at 1.3 μm

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12 Author(s)
Pougeoise, E. ; LETI, CEA-Grenoble, Grenoble, France ; Gilet, P. ; Grosse, P. ; Poncet, S.
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Results on strained InGaAs quantum well vertical cavity surface emitting lasers for optical interconnection applications are reported. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm is demonstrated at room temperature. The metal-organic vapour-phase epitaxy grown structure was processed as top p-type distribute Bragg reflector oxide-confined devices.

Published in:

Electronics Letters  (Volume:42 ,  Issue: 10 )

Date of Publication:

11 May 2006

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