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Strained InGaAs quantum well vertical cavity surface emitting lasers emitting at 1.3 μm

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12 Author(s)
E. Pougeoise ; LETI, CEA-Grenoble, Grenoble, France ; P. Gilet ; P. Grosse ; S. Poncet
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Results on strained InGaAs quantum well vertical cavity surface emitting lasers for optical interconnection applications are reported. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm is demonstrated at room temperature. The metal-organic vapour-phase epitaxy grown structure was processed as top p-type distribute Bragg reflector oxide-confined devices.

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Electronics Letters  (Volume:42 ,  Issue: 10 )