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Three-terminal-controlled resistor-type hydrogen sensor

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7 Author(s)
Hung, C.W. ; Dept. of Electr. Eng., Cheng-Kung Univ., Tainan, Taiwan ; Lin, H.-L. ; Tsai, Y.Y. ; Lai, P.-H.
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A novel and interesting three-terminal-controlled active resistor-type hydrogen sensor, based on good properties in the linear region of an AlGaAs-based pseudomorphic high electron mobility transistor in combination with the catalytic Pd metal, is demonstrated. The experimental results show that the gate-source voltage VGS exhibits significant influence on the hydrogen-sensing properties, including resistance sensitivity, detection limit of hydrogen concentration, conductance variation, current variation and dynamic response. Consequently, under an appropriate applied VGS bias, a smart active resistor-type hydrogen sensor can be achieved.

Published in:

Electronics Letters  (Volume:42 ,  Issue: 10 )