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A novel array architecture [depletion-enhanced body-isolation (DEBI)] has been proposed for NAND-type flash memories, and its memory characteristics are investigated in detail by device simulations. Having the shallow junctions on the thin active area, the proposed array architecture achieves high device performances with a fully depleted silicon-on-insulator (FDSOI) structure and enables stable erase operation without any problems based on an SOI structure. In particular, during the program operation, the DEBI architecture exhibited excellent self-boost efficiency originating from the isolated body. This can reduce the program disturbance effectively and can lower the Vpass voltages.